付德君
付德君
武汉大学物理科学与技术学院教授。主要研究方向为加速器电镜联机及材料科学应用、DLC（类金刚石）、CN（氮化碳）、纳米晶复合材料、自旋电子学及铁和Free-standing GaN、宽禁带半导体。。
简 历
1981-1985， 武汉大学物理系,获学士学位。
1985-1988， 武汉大学物理系，获硕士学位。
1988-1995， 三峡大学物理系，讲师。
1996-1999， 武汉大学物理系，获博士学位。
1999-2002， 东国大学（韩国）量子功能半导体研究中心，博士后fellow。
从事GaN、MOS、纳米pyramid、磁性半导体的研究工作。
2001-2004， 东国大学（韩国）研究教授，从事铁电存贮器、自旋电子学研究。
2004年－今， 武汉大学教授，从事宽禁带半导体、自旋电子学、离子束材料合成与改性。
科研项目
1. 教育部留学回国启动基金：宽禁带半导体与自旋电子学
2. 国家自然科学基金：多比特(multibit)存储器材料与器件
3. 国家计委产业化项目：氮化碳超硬涂层技术的中试及产业化
4、国家自然科学基金重点项目：加速器-电镜联机及其在材料科学中的应用
科研成果
在Appl. Phys. Lett.和Phys. Rev. B等国际知名期刊上发表论文 50 余篇。他引近300次。首次采用光电化学方法制备GaN基MOS器件；率先用光化学方法形成GaN纳米金锥；首次在磁性半导体材料中观测到铁电存储特性。申请发明专利13项。
教学工作
大学物理（本科课程）；现代材料物理（研究生课程）
学术兼职
湖北省核学会副理事长
湖北省太阳能研究会副理事长
湖北省刀具协会副理事长
Chinese Phys. Lett.特约评审。
近期主要论文：
1. D. J. Fu, Y. H. Kwon, T. W. Kang, and K. S. Chung, GaN metal-oxide-semiconductor structures using Ga-oxide dielectrics formed by photoelectrochemical oxidation, Appl. Phys. Lett. 80 (2002) 446.
2. D. J. Fu, T. W. Kang, Sh. U. Yudalshev, J. S. Yun, K. S. Chung, Effect of photoelectrochemical oxygenation on properties of GaN epilayers grown by MBE, Appl. Phys. Lett. 78 (2001) 1309.
3. D. J. Fu and T. W. Kang, Electrical properties of GaN-based metal-oxide-semiconductor structures fabricated by photoelectrochemical oxidation, Jpn. J. Appl. Phys. 41 (2002) L1437.
4. D. J. Fu, G. P. Panin, T. W. Kang, GaN pyramids prepared by photo-assisted chemical etching, J. Kr. Phys. Soc. 42 (2003) 611.
5. D. J. Fu, Sh. U. Yudalshev, N. H. Kim, S. H. Park, T. W. Kang, K. S. Chung, A study of photoelectrochemical oxidation of GaN epilayers by extrinsic photoconductivity, Jpn. J. Appl. Phys. 40 (2001) L10.
6. D. J. Fu, Y. S. Park, T. W. Kang, Formation of hexagonal GaN pyramids by photo-assisted electroless chemical etching, Jpn. J. Appl. Phys. (2005).
8. Y. S. Park, C. M. Park, D. J. Fu, T. W. Kang, J. E. Oh, Photoluminescence studies of GaN nanorods on Si (111) substrates grown by molecular-beam epitaxy, Appl. Phys. Lett. 85 (2004) 5718.
9. Y. Shon, Y. S. Park, K. J. Chung, D. J. Fu et al, Optical and magnetic properties of Mn-implanted GaAs, J. Appl. Phys. 96 (2004) (proof).
10. Y. Shon, Y. H. Kwon, Y. S. Park, Y. Sh. Yuldashev, S. J. Lee, C. S. Park, K. J. Chung, S. J. Hoon, H. J. Kim, W. C. Lee, D. J. Fu, T. W. Kang, X. J. Fan, Ferromagnetic behavior of p-type GaN epilayer implanted with Fe ions, J. Appl. Phys. 95 (2004) 761.
11. Y. Shon, Y. H. Kwon, Sh. U Yuldashev, Y. S. Park, D. J. Fu, D. Y. Kim, H. S. Kim, T. W. Kang, J. Appl. Phys. (2003) 1546.
12. M. K. Li, C. B. Li, C. S. Liu, X. J. Fan, D. J. Fu, Y. Shon, T. W. Kang, Optical and magnetic measurements of Mn+-implanted AlN, J. Appl. Phys. 95 (2004) 755.
14. Y. H. Kwon, Y. Shon, W. C. Lee, D. J. Fu, H. C. Jeon, T. W. Kang, T. W. Kim, X. J. Fan, Optical and magnetic properties of Mn-implanted neutron-transmutation-doped GaAs bulks, J. Appl. Phys. 96 (2004).
15. Y. Shon, Y. H. Kwon, Sh. U. Yuldashev, J. H. Leem, C. S. Park, D. J. Fu, H. J. Kim, T. W. Kang, X. J. Fan, Optical and magnetic measurements of p-type GaN epilayers implanted with Mn ions, Appl. Phys. Lett. 81 (2002) 1845.
16. Y. Shon, Y. H. Kwon, Y. S. Park, Y. Sh. Yuldashev, S. J. Lee, C. S. Park, K. J. Chung, S. J. Hoon, H. J. Kim, W. C. Lee, D. J. Fu, Ferromagnetic behavior of p-type GaN epilayer implanted with Fe ions, J. Appl. Phys. 95 (2004) 761.
17. Y. Shon, Y. H. Kwon, Sh. U Yuldashev, Y. S. Park, D. J. Fu, D.Y. Kim, H. S. Kim, T. W. Kang, J. Appl. Phys. (2003) 1546.
18. Y. S. Park, J. H. Na, H. S. Lee, H. J. Kim, C. M. Park, S. W. Choi, D. J. Fu, Optical properties related to a two-dimensional electron gas at an AlGaN/GaN heterostructure, J. Kr. Phys. Soc, 43 (2003) 743.
19. Y. Shon, Y. H. Kwon, T. W. Kang, X. Fan, D. J. Fu, Optical characteristics of Mn-ion-implanted GaN epilayers, J. Cryst. Growth 245 (2002) 193.
20. Y. Shon, Sh. U. Yuldashev, X. J. Fan, D. J. Fu, Photo-enhanced magnetoresistance effect in GaAs with nanoscale magnetic clusters, Jpn. J. Appl. Phys. 40 (2001) 3082.
21. Sh. U. Yuldashev, Y. Shon, Y. H. Kwon, D. J. Fu, D. Y. Kim, H. J. Kim, T. W. Kang, X. Fan, J. Appl. Phys. 90 (2001) 3004.
22. Y. Shon, Y. H. Kwon, D. Y. Kim, X. Fan, D. Fu, T. W. Kang, Magnetic Characteristic of Mn ion implanted GaN epilayer, Jpn. J. Appl. Phys. 40 (2001) 5304.
23. Y. Shon, W. C. Lee, Y. S. Park, Y. H. Kwon, Seung Joo Lee, K. J. Chung, H. S. Kim, D. Y. Kim, D. J. Fu, Mn-implanted dilute magnetic semiconductor InP:Mn, Appl. Phys. Lett. 84 (2004) 2310.
24. Y. Shi, L. Lin, C. Z. Jiang, D. J. Fu and X. J. Fan, Structural and magnetic studies of Mn+ implanted GaN films, J. Wuhan Univ. (Nat. Sci. Ed.) 50 (2004) 555.
25. D. J. Fu, J. C. Lee, S. W. Choi, C. S. Park, G. P. Panin, T. W. Kang, X. J. Fan, Ferroelectricity in Mn-implanted CdTe, Appl. Phys. Lett. 83 (2003) 2214.
26. D. J. Fu, J. C. Lee, S. W. Choi, S. J. Lee, T. W. Kang, M. S. Jang, H. I. Lee and Y. D. Woo, Study of ferroelectricity and current–voltage characteristics of CdZnTe, Appl. Phys. Lett. 81 (2002) 5207.
27. Y. H. Kwon, C. J. Park, W. C. Lee, D. J. Fu, Memory effects related to deep levels in metal–oxide–semiconductor structure with nanocrystalline Si, Appl. Phys. Lett, 80 (2002) 2502.
主要专利
1. D. J. Fu, S. W. Choi, J. C. Lee, T. W. Kang, Nonvolatile memory devices using ferroelectric semiconductors, Application # 10-2003-007356（韩国专利申请号）.
2. D. J. Fu, S. W. Choi, J. C. Lee, T. W. Kang, 1T1C nonvolatile memory devices using ferroelectric semiconductors, Application # 10-2003-007357.
3. D. J. Fu, J. C. Lee, S. W. Choi, T. W. Kang, Nonvolatile memory using ferroelectric semiconductor channels, Application # 10-2003-007358.
4. D. J. Fu, S. W. Choi, T. W. Kang, Chemically formed GaN pyramids as template for III-nitride growth, Application # 10- 5. D. J. Fu et al, Memory devices using current-voltage hysteresis of ferroelectric semiconductors, Application # 10-2003-007355.